The following problem is described in article [1]. The authors make the calculation of the intensifying cascade constructed to the following scheme:

Pic.1 Intensifying Cascade

The input signal has the following appearance:
,

The model of the bipolar transistor was generated according to the pic.1 scheme:

Pic.2. Bipolar Transistor Model

The specified model is described by the following system of the differential equations made according to Kirchhoff’s laws:

Some parameters values were taken from article [1]:


Other parameters values not specified in the article were chosen according to the average high-frequency transistor parameters values:

currents were described by piecewise-linear function according to the volt-amps diagram of the average high-frequency diode:

Pic.3. Piecewise-smooth patch volt-amps diagram of the diode

Current model calculation with the specified parameters was made with the help of the analytical numerical method [2] realized in the Infinity program.

Calculation results are presented in pic.4, 4à.

Pic.4. Mathematical model of the bipolar transistor calculation results.

Pic.4a. Mathematical model of the bipolar transistor calculation results.

The upper level of the calculation limiting absolute local error e 1e-9.
The sampling calculation results for the time moments specified in pic.5 are given in table 1. The analytical numerical method allows to find not only the approximate values of the required solutions, but also the intervals containing the exact solutions values.

Table 1. Sampling Results

Pic.5. Time moments for the sampling results.

1. K.Y.Huang, Y.Li, C.-P.Lee “A Time-Domain Approach to Simulation and Characterization of RF HBT Two-Tone Intermodulation Distortion”, IEEE Trans. Microware Theory Tech., vol. 51, pp.2055-2062, Oct. 2003.

2. J.A.Bychkov., S.V.Scherbakov: “Analytical-numerical calculation method of dynamic systems”, St.-Petersburg, Energoatomizdat, 2001.

  
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